| 1. | Standard practice for bulk sampling of liquid uranium hexafluoride
液体六氟化铀散装取样标准实施规程 |
| 2. | Bulk sampling , handling and preparing edible vegetable oils for sensory evaluation
感官评定用大量取样,搬运和制备食用植物油 |
| 3. | Methods of test for mortar for masonry - bulk sampling of mortars and preparation of test mortars
砖石工程用灰浆的试验方法.试验灰浆的制备和灰浆集块取样 |
| 4. | Methods of test for mortar for masonry . part 2 : bulk sampling of mortars and preparation of test mortars
圬工砂浆试验方法.第2部分:砂浆的成批抽样和试验砂浆制备 |
| 5. | Methods of test for mortar for masonry - part 2 : bulk sampling of mortars and preparation of test mortars ; german version en 1015 - 2 : 1998
圬工灰浆试验方法.第2部分:灰浆取样和检验灰浆制备 |
| 6. | While successfully used in measuring the thermal properties of solid material , such as bulk samples and thin films , 3 method is seldom applied to the fluid
摘要3法已成功应用于体态、薄膜等材料导热系数的测量，但还很少应用于流体领域。 |
| 7. | The experiments also show that the responding speed of the thick film is improved and it has better properties than bulk samples and the ybco film may be as a new oxygen sensor material in practical application
同块材样品相比，实验证实ybco厚膜样品的响应速度得到明显提高并具有较好的响应特性，有可能作为一种新的氧传感器材料。 |
| 8. | Here we take the strained si cap layer with relaxed sige layer grown epitaxially by uhvcvd to form nmosfet and relaxed si cap layer with strained sige layer to form pmosfet as comparison to bulk sample
在论文中我们给出了两种不同的材料结构来与体si材料进行比较，用应变的sicap层和弛豫的sige材料层构建nmos管，用弛豫的sicap层和应变的sige材料层构建pmos管。 |
| 9. | The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility , larger transconductance , stronger drive capability and hence faster circuit speed
与体si器件相比,采用sige材料的异质结器件已经在许多方面显示出了强大的优势:譬如更大的载流子迁移率，更大的跨导，更强的电流驱动能力以及更快的电路速度等等。 |
| 10. | Strained - soi mosfet , which appears recently , takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ) . it has shown advantages over bulk sample in enhanced carriers mobility , as well as higher transconductance , stronger drive capability and reduced parasitic capacitances . these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近几年才出现的新型器件,它将soi材料和sige材料结合在一起,与传统体硅器件相比,表现出载流子迁移率高、电流驱动能力强、跨导大、寄生效应小等优势,特别适用于高性能、高速度、低功耗超大规模集成电路。 |
